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GB/T 14142-2017 Active
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
Abstract
This standard specifies the method of displaying the integrity of the silicon epitaxial layer by chemical etching and examining it with a metallographic microscope. This standard is applicable to the inspection of stacking dislocations and dislocation densities in the silicon epitaxial layer, with a silicon epitaxial layer thickness greater than 2 μm and a defect density test range of 0 to 10,000 cm-2.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 14142-2017 |
| CCS | \nTest methods for the chemical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2018-04-01 |
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