GB/T 3656-1983
Replaced
GB/T 14142-2017
Active
National standards
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
Basic Information
Standard Code:
GB/T 14142-2017
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the chemical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2017-11-01
Implement Date:
2018-04-01
Pages:
7 pages
Scope
This standard specifies the method of displaying the integrity of the silicon epitaxial layer by chemical etching and examining it with a metallographic microscope. This standard is applicable to the inspection of stacking dislocations and dislocation densities in the silicon epitaxial layer, with a silicon epitaxial layer thickness greater than 2 μm and a defect density test range of 0 to 10,000 cm-2.
Development Information
Replace the following standards
Referenced Standards
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced