GB/T 35306-2017
GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry
Abstract
This standard specifies the method for determining the content of substitutional carbon and interstitial oxygen impurities in silicon single crystals by low-temperature Fourier transform infrared spectroscopy. This standard is applicable to the determination of the content of substitutional carbon and interstitial oxygen impurities in N-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and P-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm. The effective range of carbon and oxygen content determination in this standard is from 5×1014 atoms·cm-3 (0.01 ppma) to the maximum solid solubility of substitutional carbon and interstitial oxygen in silicon.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 35306-2017 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | \nMetal material testing |
| Implement Date | 2018-07-01 |