GB/T 35306-2017 Replaced National standards

GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry

GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry

Publish Date: 2017-12-29 Implement Date: 2018-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 35306-2017

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: \nMetal material testing

Publish Date: 2017-12-29

Implement Date: 2018-07-01

Pages: 9 pages

Scope

This standard specifies the method for determining the content of substitutional carbon and interstitial oxygen impurities in silicon single crystals by low-temperature Fourier transform infrared spectroscopy. This standard is applicable to the determination of the content of substitutional carbon and interstitial oxygen impurities in N-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and P-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm. The effective range of carbon and oxygen content determination in this standard is from 5×1014 atoms·cm-3 (0.01 ppma) to the maximum solid solubility of substitutional carbon and interstitial oxygen in silicon.

Development Information

Word Count: 16 Thousand words Pages: 9 pages

Superseded by the following standards

GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method

Referenced Standards

ASTM E131 GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 8170-1987 Rules for rounding off of numberical values GB/T 8170-2008 Rules of rounding off for numerical values & expression and judgement of limiting values GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy

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