GB/T 4298-1984
Abolished
T/CSA 102-2025
Active
Group standards
T/CSA 102-2025 The thickness of the GaN epitaxial layer for heterogeneous epitaxy is tested using white light interference method
T/CSA 102-2025 The thickness of the GaN epitaxial layer for heterogeneous epitaxy is tested using white light interference method
Price:
$ 31.00
Basic Information
Standard Code:
T/CSA 102-2025
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Other discrete semiconductor devices
Publish Date:
1970-01-01
Implement Date:
1970-01-01
Scope
This document describes the principle, experimental conditions, instrumentation, samples, experimental steps, data processing, precision, and test report for testing the thickness of GaN epitaxial layers using white light interference method in a single heteroepitaxial structure. This document is applicable to the testing of the thickness of GaN epitaxial layers (with a range of 11 μm to 43 μm). The thickness of single-structure films of AlN, InN, AlGaN, and InGaN on heteroepitaxial structures can also be tested by referring to this document.
Development Information
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