GB/T 36705-2018 Active National standards

GB/T 36705-2018 Test method for carrier concentration of gallium nitride substrates—Raman spectrum method

GB/T 36705-2018 Test method for carrier concentration of gallium nitride substrates—Raman spectrum method

Publish Date: 2018-09-17 Implement Date: 2019-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 36705-2018

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2018-09-17

Implement Date: 2019-06-01

Pages: 7 pages

Scope

This standard specifies the method of using Raman spectroscopy to test the carrier concentration of N-type gallium nitride substrates. This standard is applicable to the testing of the carrier concentration of N-type gallium nitride substrates grown on sapphire, silicon carbide, silicon, and gallium nitride materials. The testing range is 1×1017 cm-3 to 1×1020 cm-3.

Development Information

Word Count: 11 Thousand words Pages: 7 pages

Referenced Standards

GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 8170-1987 Rules for rounding off of numberical values GB/T 8170-2008 Rules of rounding off for numerical values & expression and judgement of limiting values GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

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