GB/T 24580-2009 Active National standards

GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 24580-2009
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Semi-metals and semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2009-10-30
Implement Date: 2010-06-01
Pages: 9 pages

Development Information

Word Count: 13 Thousand words Pages: 9 pages

Referenced Standards

ASTM E122

Adopt standards

SEMI MF 1528-1104

Related Standards

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