GB/T 13388-1992
Replaced
GB/T 11093-1989
Replaced
National standards
GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
Basic Information
Standard Code:
GB/T 11093-1989
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Semi-metal
ICS Name:
Semiconductor materials
Publish Date:
1989-03-31
Implement Date:
1990-03-01
Publisher:
The National Technical Supervision Bureau
Pages:
6 pages
Development Information
Drafting Units:
Beijing Nonferrous Metals Research Institute
Drafting Persons:
Li Guanghua and Deng Zhijie
Superseded by the following standards
Referenced Standards
GB 8759
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 8760-1988 Gallium arsenide single crystal—Determination of dislocation density
GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density
GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Related Standards
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced
GB/T 14139-1993 Silicon epitaxial wafers
GB/T 14141-1993
Replaced