GB/T 14139-1993 Silicon epitaxial wafers

GB/T 14139-2009 Silicon epitaxial wafers

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.2-2008 Sampling procedures for inspection by attributes—Part 2:Sampling plans indexed by limiting quality(LQ)for isolated lot inspection GB/T 2828.3-2008 Sampling procedures for inspection by attributes—Part 3:Skip-lot sampling procedures GB/T 2828.4-2008 Sampling procedures for inspection by attributes—Part 4:Procedures for assessment of declared quality levels GB/T 2828.5-2011 Sampling procedures for inspection by attributes—Part 5:System of sequential sampling plans indexed by acceptance quality limit(AQL)for lot-by-lot inspection GB/T 2828.10-2010 Sampling procedures for inspection by attributes—Part 10:Introduction to the GB/T 2828 series of standards for sampling for inspection by attributes GB/T 2828.11-2008 Sampling procedures for inspection by attributes—Part 11:Procedures for assessment of declared quality levels for small population GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 12962-1996 Monocrystalline silicon GB/T 12962-2005 Monoccrystalline silicon GB/T 12962-2015 Monocrystalline silicon GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique GB/T 14145-1993 Test method for stacking fault density of epitaxial layers of silicon by interference-contrast microscopy GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials YS/T 23-2016 Test method for thickness of epitaxial layers—Stacking fault size YS/T 24-2016 Test methods for spike of epitaxial layers YS/T 28-1992 Silicon wafer packaging YS/T 28-2015 Package of silicon wafers YS/T 23-1992 The method of measuring the thickness of a silicon epitaxial layer using stacking dislocation size YS/T 24-1992 The inspection method for extrusion nail defects YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling

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