GB/T 13389-1992 Replaced National standards

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19 Implement Date: 1992-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 13389-1992

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: Semiconductor materials

Publish Date: 1992-02-19

Implement Date: 1992-10-01

Publisher: The National Technical Supervision Bureau

Pages: 18 pages

Development Information

Drafting Units:

Emei Semiconductor Materials Research Institute

Drafting Persons:

Huo Huifen, Chen Yongtong, and Wu Daorong

Word Count: 34 Thousand words Pages: 18 pages

Superseded by the following standards

GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon

Referenced Standards

GB 6615

Adopt standards

ASTM F723-87

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06

GB/T 14141-1993 Replaced

GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

Publish Date: 1993-02-06