GB/T 14264-1993
Replaced
GB/T 4937.18-2018
Active
National standards
GB/T 4937.18-2018 Semiconductor devices—Mechanical and climatic test methods—Part 18:Ionizing radiation(total dose)
GB/T 4937.18-2018 Semiconductor devices—Mechanical and climatic test methods—Part 18:Ionizing radiation(total dose)
Basic Information
Standard Code:
GB/T 4937.18-2018
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2018-09-17
Implement Date:
2019-01-01
Pages:
11 pages
Scope
This part of GB/T 4937 provides a test procedure for the total dose of ionizing radiation from 60Co γ-ray sources on packaged semiconductor integrated circuits and semiconductor discrete devices. This part provides an accelerated annealing test method to evaluate the effects of low-dose-rate ionizing radiation on devices. This annealing test is particularly important for applications involving low-dose-rate radiation or devices that exhibit time-dependent effects in certain application scenarios. This part is only applicable to steady-state irradiation and is not suitable for pulse-type irradiation. This part is mainly aimed at military or space-related applications. This test may cause serious degradation of the electrical performance of irradiated devices, and is therefore considered a destructive test.
Development Information
Same series standard
GB/T 4937.11-2018 Semiconductor devices—Mechanical and climatic test methods—Part 11:Rapid change of temperature—Two-fluid-bath method
GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12:Vibration,variable frequency
GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13:Salt atmosphere
GB/T 4937.14-2018 Semiconductor devices—Mechanical and climatic test methods—Part 14:Robustness of terminations(lead integrity）
GB/T 4937.15-2018 Semiconductor devices—Mechanical and climatic test methods—Part 15:Resistance to soldering temperature for through-hole mounted devices
GB/T 4937.17-2018 Semiconductor devices—Mechanical and climatic test methods—Part 17:Neutron irradiation
GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19:Die shear strength
GB/T 4937.20-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20:Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21:Solderability
GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22:Bond strength
GB/T 4937.30-2018 Semiconductor devices—Mechanical and climatic test methods—Part 30:Preconditioning of non-hermetic surface mount devices prior to reliability testing
GB/T 4937.201-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20-1:Handling,packing,labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat
Adopt standards
IEC 60749-18:2002
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active