GB/T 4937.17-2018 Active National standards

GB/T 4937.17-2018 Semiconductor devices—Mechanical and climatic test methods—Part 17:Neutron irradiation

GB/T 4937.17-2018 Semiconductor devices—Mechanical and climatic test methods—Part 17:Neutron irradiation

Publish Date: 2018-09-17 Implement Date: 2019-01-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 4937.17-2018

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2018-09-17

Implement Date: 2019-01-01

Pages: 6 pages

Scope

This part of GB/T 4937 is designed to determine the sensitivity of semiconductor devices to performance degradation in a neutron environment. This part is applicable to integrated circuits and discrete semiconductor devices. Neutron irradiation is mainly used for military or space-related applications and is a destructive test. The purposes of the test are as follows: a) to detect and measure the relationship between the degradation of key parameters of semiconductor devices and the neutron dose; b) to determine whether the specified parameters of semiconductor devices are within the specified limits after receiving a specified level of neutron dose radiation (see Chapter 4).

Development Information

Word Count: 10 Thousand words Pages: 6 pages

Same series standard

GB/T 4937.11-2018 Semiconductor devices—Mechanical and climatic test methods—Part 11:Rapid change of temperature—Two-fluid-bath method GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12:Vibration,variable frequency GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13:Salt atmosphere GB/T 4937.14-2018 Semiconductor devices—Mechanical and climatic test methods—Part 14:Robustness of terminations(lead integrity） GB/T 4937.15-2018 Semiconductor devices—Mechanical and climatic test methods—Part 15:Resistance to soldering temperature for through-hole mounted devices GB/T 4937.18-2018 Semiconductor devices—Mechanical and climatic test methods—Part 18:Ionizing radiation(total dose) GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19:Die shear strength GB/T 4937.20-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20:Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21:Solderability GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22:Bond strength GB/T 4937.30-2018 Semiconductor devices—Mechanical and climatic test methods—Part 30:Preconditioning of non-hermetic surface mount devices prior to reliability testing GB/T 4937.201-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20-1:Handling,packing,labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat

Adopt standards

IEC 60749-17:2003

Related Standards

GB/T 14264-1993 Replaced

GB/T 14264-1993 Semiconductor materials—Terms and definitions

Publish Date: 1993-03-12

GB/T 14844-1993 Replaced

GB/T 14844-1993 Designations of semiconductor materials

Publish Date: 1993-12-24

GB/T 17573-1998 Active

GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General

Publish Date: 1998-11-17

GB/T 12560-1999 Active

GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices

Publish Date: 1999-08-02

GB/T 11499-2001 Active

GB/T 11499-2001 Letter symbols for discrete semiconductor devices

Publish Date: 2001-11-05

GB/T 20521-2006 Active

GB/T 20521-2006 Semiconductor devices—Part 14-1:Semiconductor sensors—General and classification

Publish Date: 2006-08-23