GB/T 11093-1989
Replaced
GB/T 29852-2013
Active
National standards
GB/T 29852-2013 Test method for measuring phosphorus,arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 29852-2013 Test method for measuring phosphorus,arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
Basic Information
Standard Code:
GB/T 29852-2013
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2013-11-12
Implement Date:
2014-04-15
Pages:
6 pages
Scope
This standard specifies a method for determining the content of phosphorus, arsenic, and antimony in silicon materials for photovoltaic cells using secondary ion mass spectrometers (SIMS).
This standard is applicable to the quantitative analysis of the donor impurities phosphorus, arsenic, and antimony in silicon materials for photovoltaic cells, where the concentrations of phosphorus, arsenic, and antimony are all greater than 1×1014 atoms/cm3.
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced