GB/T 11093-1989
Replaced
GB/T 26071-2010
Replaced
National standards
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells
Basic Information
Standard Code:
GB/T 26071-2010
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2011-01-10
Implement Date:
2011-10-01
Pages:
8 pages
Scope
This standard specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality certificates and order forms for silicon single-crystal wafers used in solar cells (referred to as silicon wafers).
This standard applies to silicon single-crystal wafers for ground-mounted solar cells prepared by the Czochralski (CZ/MCZ) method.
Development Information
Superseded by the following standards
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices
GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 25076-2010 Monocrystalline silicon of solar cell
GB/T 25076-2018 Monocrystalline silicon for solar cell
GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced