GB/T 26071-2010 Replaced National standards

GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells

GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells

Publish Date: 2011-01-10 Implement Date: 2011-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 26071-2010
Standard Type: National standards
Standard Status: Replaced
is_force_gb: no
CCS Name: Semi-metals and semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2011-01-10
Implement Date: 2011-10-01
Pages: 8 pages

Scope

This standard specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality certificates and order forms for silicon single-crystal wafers used in solar cells (referred to as silicon wafers).
This standard applies to silicon single-crystal wafers for ground-mounted solar cells prepared by the Czochralski (CZ/MCZ) method.

Development Information

Word Count: 12 Thousand words Pages: 8 pages

Superseded by the following standards

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 25076-2010 Monocrystalline silicon of solar cell GB/T 25076-2018 Monocrystalline silicon for solar cell GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers

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