GB/T 11093-1989
Replaced
GB/T 26071-2026
Pending
National standards
GB/T 26071-2026 Monocry stallinesilicon and wafers for solar cells
GB/T 26071-2026 Monocry stallinesilicon and wafers for solar cells
Basic Information
Standard Code:
GB/T 26071-2026
Standard Type:
National standards
Standard Status:
Pending
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2026-01-28
Implement Date:
2026-08-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备与材料标准化技术委员会材料分会(SAC/TC 203/SC 2)
Pages:
16 pages
Scope
本文件规定了太阳能电池用硅单晶(简称“硅单晶”)及硅单晶片(简称“硅片”)的牌号与分类、技术要求、检验规则、标志、包装、运输、贮存及随行文件和订货单内容,描述了相应的试验方法。
本文件适用于直拉法制备的硅单晶以及经加工制成的硅单晶片。
Development Information
Drafting Units:
TCL中环新能源科技股份有限公司、隆基绿能科技股份有限公司、青岛高测科技股份有限公司、晶澳太阳能科技股份有限公司、双良硅材料(包头)有限公司、有色金属技术经济研究院有限责任公司、高景太阳能股份有限公司、四川永祥股份有限公司、宁夏环欧新能源技术有限公司
Drafting Persons:
张雪囡、李建弘、刘梓暄、邢旭、秦潇、王新社、于林鑫、张存江、贺东江、乔乐、赵存凤、黄仕建、李素青、韩庆辉
Replace the following standards
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 30859-2014 Test method for warp and waviness of silicon wafers for solar cells
GB/T 30860-2014 Test methods for surface roughness and saw mark of silicon wafers for solar cells
GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers—Noncontact eddy-current sensor
SJ/T 11630-2016 SJ/T 11630-2016 Geometric Dimension Test Method for Silicon Substrates Used in Solar Cells
YS/T 28-1992 Silicon wafer packaging
YS/T 28-2015 Package of silicon wafers
YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced