GB/T 14847-2025 Active National standards

GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

Publish Date: 2025-10-31 Implement Date: 2026-05-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 14847-2025

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2025-10-31

Implement Date: 2026-05-01

Pages: 12 pages

Scope

This document describes a method for testing the thickness of lightly doped silicon epitaxial layers on heavily doped substrates using infrared reflection.
This document is applicable to the testing of silicon epitaxial layers with a thickness greater than 0.5 μm, prepared on substrates with resistivity ranging from 0.0006 Ω·cm to 0.025 Ω·cm.

Development Information

Word Count: 19 Thousand words Pages: 12 pages

Replace the following standards

GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

Referenced Standards

GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration

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