SJ/T 11489-2015 Active Industry standards-Electronics

SJ/T 11489-2015 The measurement method for the low-dislocation density indium phosphide polished surface pit density

Publish Date: 2015-04-30 Implement Date: 2015-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: SJ/T 11489-2015

Standard Type: Industry standards

Standard Status: Active

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2015-04-30

Implement Date: 2015-10-01

Pages: 4 pages

Development Information

Pages: 4 pages

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06