GB/T 11093-1989
Replaced
DB35/T 1146-2011
Active
Fujian ProvinceLocal standards
DB35/T 1146-2011 Determination of impurity element content in silicon materials using glow discharge mass spectrometry
DB35/T 1146-2011 Determination of impurity element content in silicon materials using glow discharge mass spectrometry
Price:
$ 30
Basic Information
Standard Code:
DB35/T 1146-2011
Standard Type:
Local standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2011-04-10
Implement Date:
2011-07-10
Pages:
12 pages
Scope
This standard specifies the terms and definitions, principles, reagents and materials, instruments and equipment, sample requirements, analysis steps, result calculation, and allowable deviations involved in the glow discharge mass spectrometry (GDMS) method for determining the content of impurity elements in silicon materials. This standard is applicable to the determination of impurity elements such as Li, Be, B, Na, Mg, Al, P, K, Th, and U in silicon materials with a purity not exceeding 99.99999%.
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced