GB/T 32495-2016 Active National standards

GB/T 32495-2016 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of arsenic in silicon

GB/T 32495-2016 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of arsenic in silicon

Publish Date: 2016-02-24 Implement Date: 2017-01-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 32495-2016
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Basic standards and general methods
ICS Name: Chemical analysis
Publish Date: 2016-02-24
Implement Date: 2017-01-01
Pages: 14 pages

Scope

This standard details the method for conducting a depth analysis of arsenic in silicon using a sector magnetic field or a quadrupole secondary ion mass spectrometer, as well as the method for depth calibration using a stylus profiler or an optical interferometer. This standard is applicable to monocrystalline silicon, polycrystalline silicon, and amorphous silicon samples with an arsenic atomic concentration ranging from 1×1016 atoms/cm3 to 2.5×1021 atoms/cm3, and pit depths of 50 nm or greater.

Development Information

Word Count: 23 Thousand words Pages: 14 pages

Referenced Standards

Adopt standards

ISO 12406:2010

Related Standards

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