SJ/T 11972-2025 Active Industry standards-Electronics

SJ/T 11972-2025 Insulated Gate Bipolar Transistor (IGBT) Flat Ceramic Housing/Shell

Publish Date: 2025-05-09 Implement Date: 2025-08-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: SJ/T 11972-2025

Standard Type: Industry standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor transistor

ICS Name: Other discrete semiconductor devices

Publish Date: 2025-05-09

Implement Date: 2025-08-01

Publisher: 工业和信息化部

Development Information

Related Standards

GB/T 4298-1984 Abolished

GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

Publish Date: 1984-03-28

GB/T 15449-1995 Active

GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application

Publish Date: 1995-01-05

GB/T 15450-1995 Abolished

GB/T 15450-1995 Blank detail specification for silicon dual-gate field-effect transistors

Publish Date: 1995-01-05

GB/T 15529-1995 Active

GB/T 15529-1995 Blank detail specification for LED numeric displays

Publish Date: 1995-04-06

GB/T 32817-2016 Active

GB/T 32817-2016 Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS

Publish Date: 2016-08-29

GB/T 41852-2022 Active

GB/T 41852-2022 Semiconductor devices-Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures

Publish Date: 2022-10-12