GB/T 30453-2013 Active National standards

GB/T 30453-2013 Metallographs collection for original defects of crystalline silicon

GB/T 30453-2013 Metallographs collection for original defects of crystalline silicon

Publish Date: 2013-12-31 Implement Date: 2014-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30453-2013

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2013-12-31

Implement Date: 2014-10-01

Pages: 83 pages

Scope

This standard provides terminology and morphological characteristics of various native defects and closely related induced defects in silicon materials such as silicon polycrystals, silicon single crystals, silicon wafers, and silicon epitaxial wafers. It analyzes the causes of their occurrence and methods of elimination.
This standard is applicable to the inspection of various defects in the production and research of silicon polycrystals, silicon single crystals, silicon wafers, and silicon epitaxial wafers. The production and research of silicon devices and integrated circuits can also refer to this standard.

Development Information

Word Count: 151 Thousand words Pages: 83 pages

Referenced Standards

GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06