GB/T 4937.28-2026 Active National standards

GB/T 4937.28-2026 Semiconductor devices—Mechanical and climate test methods—Part 28:Electrostatic discharge(ESD)sensitivity testing—Charged device model(CDM)—device level

Publish Date: 2026-02-27 Implement Date: 2026-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Price: $ 149

Out of stock

Basic Information

Standard Code: GB/T 4937.28-2026

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2026-02-27

Implement Date: 2026-09-01

Pages: 48 pages

Scope

This document establishes a procedure for ESD testing, evaluation, and classification of components and microcircuits based on their sensitivity to damage or degradation caused by ESD according to the specified Charged Device Model (CDM). This document is applicable to the evaluation of all semiconductor packaging devices, thin-film circuits, surface acoustic wave (SAW) devices, optoelectronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) that include any of these devices. For testing, components must be mounted in packaging similar to that used in end applications. The CDM model described in this document is not applicable to socket-based discharge model testing equipment. This document describes the field-induced (FI) method, while an alternative direct contact (DC) method is described in Appendix J. The purpose of this document is to establish a testing method that can replicate CDM failures and provide reliable, repeatable CDM ESD test results across different testing equipment, without distinguishing between device types. Reproducible data ensures accurate classification and comparison of CDM ESD sensitivity levels.