GB/T 11093-1989
Replaced
T/DZJN 298-2024
Active
Group standards
T/DZJN 298-2024 Photovoltaic material high purity multicrystalline silicon process technical specification
T/DZJN 298-2024 Photovoltaic material high purity multicrystalline silicon process technical specification
Price:
$ 20.00
Basic Information
Standard Code:
T/DZJN 298-2024
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
-
ICS Name:
Semiconductor materials
Publish Date:
2024-09-10
Implement Date:
2024-09-13
Scope
Main technical content: This document specifies the general requirements, process design, main process flow, process control, energy consumption limits per unit product, testing and process control, major auxiliary projects, and labor and occupational health requirements for the high-purity polycrystalline silicon process technology of photovoltaic materials. This document is applicable to the selection of process routes and process technology control for high-purity polycrystalline silicon enterprises, and it is also applicable to environmental industry access for new construction or expansion projects
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced