T/IAWBS 001-2017 Active Group standards

T/IAWBS 001-2017 Silicon carbide single crystal

Publish Date: 2017-12-20 Implement Date: 2018-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 001-2017

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Abrasives and abrasive tools

ICS Name: Semiconductor materials

Publish Date: 2017-12-20

Implement Date: 2018-12-31

Scope

Main technical content: This standard specifies the necessary related terms, product classification, technical requirements, test methods, inspection rules, and marking, packaging, transportation, storage, etc. of 4H and 6H silicon carbide single crystals. This standard applies to 4H and 6H silicon carbide single crystals prepared by physical vapor deposition. The products are mainly used for making epitaxial substrates for semiconductor lighting, power electronic devices, and microwave devices. This standard specifies the Raman spectroscopy detection method for silicon carbide wafers. This standard applies to the Raman spectroscopy detection of the [0001] direction and (0001) plane of silicon carbide wafers with the crystal orientation <0001> at room temperature. This standard specifies the swing curve detection method for silicon carbide wafers. This standard applies to the swing curve detection of the [0001] direction and (0001) plane of silicon carbide wafers with the crystal orientation [0001] at room temperature. This standard specifies the method of determining the dislocation density of silicon carbide single crystals by the molten potassium hydroxide corrosion method. This standard applies to silicon carbide single-crystal wafers.