GB/T 11093-1989
Replaced
T/ZZB 2332-2021
Active
Group standards
T/ZZB 2332-2021 Laser-diode-emitting using sapphire polishing substrate
T/ZZB 2332-2021 Laser-diode-emitting using sapphire polishing substrate
Price:
$ 20.00
Basic Information
Standard Code:
T/ZZB 2332-2021
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2021-08-30
Implement Date:
2021-09-30
Scope
Main technical content: This document specifies the terms and definitions, basic requirements, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and quality commitments for sapphire substrate wafers used in light-emitting diodes (hereinafter referred to as sapphire substrate wafers). This document is applicable to sapphire substrate wafers with a diameter of 100 mm, which are used for the epitaxial growth of gallium nitride-based light-emitting diodes (LEDs).
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced