GB/T 3656-1983
Replaced
GB/T 42905-2023
Active
National standards
GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
Price:
$ 50
Basic Information
Standard Code:
GB/T 42905-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2023-08-06
Implement Date:
2024-03-01
Pages:
7 pages
Scope
This document describes a method of testing the thickness of the epitaxial layer of silicon carbide using infrared reflection.
This document is suitable for testing the thickness of homogeneous silicon carbide epitaxial layers with a doping concentration of less than 1×1016 cm-3 on n-type silicon carbide substrates with a doping concentration of greater than 1×1018 cm-3, with a test range of 3 μm to 200 μm.
Development Information
Referenced Standards
GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
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