GB/T 42905-2023 Active National standards

GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method

GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method

Publish Date: 2023-08-06 Implement Date: 2024-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
Price: $ 50
Download

Basic Information

Standard Code: GB/T 42905-2023
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: \nTest methods for the physical properties of metals
ICS Name: \nMetal material testing
Publish Date: 2023-08-06
Implement Date: 2024-03-01
Pages: 7 pages

Scope

This document describes a method of testing the thickness of the epitaxial layer of silicon carbide using infrared reflection.
This document is suitable for testing the thickness of homogeneous silicon carbide epitaxial layers with a doping concentration of less than 1×1016 cm-3 on n-type silicon carbide substrates with a doping concentration of greater than 1×1018 cm-3, with a test range of 3 μm to 200 μm.

Development Information

Word Count: 15 Thousand words Pages: 7 pages

Referenced Standards

Related Standards

Contact Us