GB/T 11093-1989
Replaced
GB/T 37053-2018
Active
National standards
GB/T 37053-2018 General specification for epitaxial wafers and substrates based on gallium nitride
GB/T 37053-2018 General specification for epitaxial wafers and substrates based on gallium nitride
Basic Information
Standard Code:
GB/T 37053-2018
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2018-12-28
Implement Date:
2019-07-01
Pages:
12 pages
Scope
This standard specifies the general specifications for gallium nitride epitaxial wafers (hereinafter referred to as epitaxial wafers) and gallium nitride substrate wafers (hereinafter referred to as substrate wafers), including product classification, requirements, inspection methods, inspection rules, as well as marking, packaging, transportation, and storage. This standard applies to gallium nitride epitaxial wafers and gallium nitride substrate wafers. The products are mainly used in optoelectronic devices such as light-emitting diodes, laser diodes, detectors, as well as microwave and power electronic power devices.
Development Information
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced