T/NXCL 29-2024 Active Group standards

T/NXCL 29-2024 300 mm low oxygen content polished single crystal monocrystalline silicon

Publish Date: 2024-02-06 Implement Date: 2024-02-06 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/NXCL 29-2024

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Semiconductor materials

Publish Date: 2024-02-06

Implement Date: 2024-02-06

Scope

Scope: This document specifies the terms and definitions, technical requirements, test methods, inspection rules, and aspects such as marking, packaging, transportation, storage, quality certificates, order forms (or contracts), and quality commitments for 300 mm low-oxygen content direct-pull silicon single-crystal polished wafers. This document applies to silicon single-crystal polished wafers prepared by single- or double-sided polishing of 300 mm low-oxygen content direct-pull silicon single-crystal grinding wafers, which are primarily used as substrates to meet the technical requirements of power devices such as insulated gate bipolar transistors (IGBTs). Main technical content: This document specifies the terms and definitions, technical requirements, test methods, inspection rules, and aspects such as marking, packaging, transportation, storage, quality certificates, order forms (or contracts), and quality commitments for 300 mm low-oxygen content direct-pull silicon single-crystal polished wafers. This document applies to silicon single-crystal polished wafers prepared by single- or double-sided polishing of 300 mm low-oxygen content direct-pull silicon single-crystal grinding wafers, which are primarily used as substrates to meet the technical requirements of power devices such as insulated gate bipolar transistors (IGBTs).