GB/T 31854-2015 Active National standards

GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry

GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry

Publish Date: 2015-07-03 Implement Date: 2016-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 31854-2015
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Element semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2015-07-03
Implement Date: 2016-03-01
Pages: 7 pages

Scope

This standard specifies the method for determining the content of trace metallic impurities in silicon materials for photovoltaic cells using inductively coupled plasma mass spectrometers (ICP-MS).
This standard is applicable to the determination of the content of trace metallic impurities such as iron, chromium, nickel, copper, and zinc in silicon materials for photovoltaic cells. The measurement ranges for each element are shown in Table 1.

Development Information

Word Count: 12 Thousand words Pages: 7 pages

Referenced Standards

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