GB/T 11093-1989
Replaced
GB/T 31854-2015
Active
National standards
GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
Basic Information
Standard Code:
GB/T 31854-2015
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2015-07-03
Implement Date:
2016-03-01
Pages:
7 pages
Scope
This standard specifies the method for determining the content of trace metallic impurities in silicon materials for photovoltaic cells using inductively coupled plasma mass spectrometers (ICP-MS).
This standard is applicable to the determination of the content of trace metallic impurities such as iron, chromium, nickel, copper, and zinc in silicon materials for photovoltaic cells. The measurement ranges for each element are shown in Table 1.
Development Information
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced