T/IAWBS 011-2019 Active Group standards

T/IAWBS 011-2019 Resistance measurement method for conductive silicon carbide single crystal wafers - Non-contact eddy current method

Publish Date: 2019-12-27 Implement Date: 2019-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Price: $ 20.00

Out of stock

Basic Information

Standard Code: T/IAWBS 011-2019

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Semiconductor materials

Publish Date: 2019-12-27

Implement Date: 2019-12-31

Scope

Scope: This standard specifies the method of measuring the resistivity of conductive silicon carbide single wafers using non-contact eddy current method. This standard is applicable to silicon carbide single wafers with a thickness of 200 μm to 1000 μm. This standard is applicable to resistivity in the range of 0.005 Ω·cm to 200 Ω·cm and surface resistance in the range of 0.032 Ω/ to 3000 Ω/ Main technical content: Silicon carbide, as a third-generation semiconductor, has unique functions and applications in high-temperature resistance, high-pressure resistance, and high-current resistance, and its technical development is becoming increasingly mature. From raw materials to functional modules, a complete industrial chain has been formed. The test of resistivity of silicon carbide single wafers is one of the key parameters for evaluating the quality of silicon carbide single wafers. Regarding the non-contact eddy current test method for conductive silicon carbide single wafers, there are no unified standards in China, nor have unified industry standards or local standards been formed. Therefore, the formulation of this standard will fill the standard gap in the technical field of conductive silicon carbide semiconductor materials in China. The implementation of this standard will provide a basis for the sales of conductive silicon carbide single crystal growth enterprises and users to select suitable products, and will standardize the conductive silicon carbide semiconductor material industry in China, thereby promoting the healthy and orderly development of the industry, and further enhancing the influence of China's silicon carbide semiconductor enterprises in the international market.