T/IAWBS 013-2019 Active Group standards

T/IAWBS 013-2019 Non-contact measurement method for resistivity of semi-insulating silicon carbide single crystal wafers

Publish Date: 2019-12-27 Implement Date: 2019-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 013-2019

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Semiconductor materials

Publish Date: 2019-12-27

Implement Date: 2019-12-31

Scope

Scope: This standard specifies the non-contact measurement method for the resistivity of semi-insulating silicon carbide. This standard is applicable to the resistivity measurement range: 105Ω·cm-1012Ω·cm; sample diameter: 50.8mm-200mm; and sample thickness range: 250μm-5000μm for substrates. Main technical content: SiC is the third-generation wide-bandgap semiconductor material following the first-generation semiconductor materials represented by silicon and the second-generation semiconductor materials represented by gallium arsenide. Due to its physical advantages, silicon carbide as a substrate material exhibits unique advantages under extreme physical conditions, particularly in high-temperature, high-frequency, strong magnetic field, and radiation resistance. High-purity semi-insulating SiC substrates are widely used in the communication field. At the same time, high-purity semi-insulating SiC substrates serve as key substrate materials for GaN HEMT microwave power devices, which are of great military significance. With the advent of the 5G era, third-generation wide-bandgap semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) will usher in development opportunities. The size and uniformity of the resistivity of high-purity semi-insulating SiC substrates are key parameters affecting device quality. Therefore, accurately measuring the resistivity of SiC substrates is of great significance for improving substrate preparation processes and device electrical performance. Researching non-contact measurement methods for the resistivity of high-purity semi-insulating SiC and unifying testing standards within the industry will greatly promote exchanges and development among SiC-related industries.