GB/T 11093-1989
Replaced
GB/T 40561-2021
Active
National standards
GB/T 40561-2021 Photovoltaic silicon material—Determination of oxygen—Pulse heating inert gas fusion infrared absorption method
GB/T 40561-2021 Photovoltaic silicon material—Determination of oxygen—Pulse heating inert gas fusion infrared absorption method
Basic Information
Standard Code:
GB/T 40561-2021
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2021-10-11
Implement Date:
2022-05-01
Pages:
9 pages
Scope
This document describes a method for determining the oxygen content in photovoltaic silicon materials by pulse heating inert gas melting and infrared absorption.
This document is suitable for determining the oxygen content in photovoltaic silicon materials such as silicon powder, industrial silicon, and granular polycrystalline silicon used in the production of polycrystalline silicon. The measurement range is 0.0010% to 0.40% by mass of oxygen. Other types of crystalline silicon materials used in the production of photovoltaic modules can be used as reference for this method.
Development Information
Referenced Standards
GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method
GB/T 8170-1987 Rules for rounding off of numberical values
GB/T 8170-2008 Rules of rounding off for numerical values & expression and judgement of limiting values
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced