T/CIET 1279-2025 Active Group standards

T/CIET 1279-2025 Silicon Carbide Single Crystal Growth Technology Specification Physical Vapor Transportation Method (PVT)

T/CIET 1279-2025 Silicon carbide single crystal growth technology specification: Physical vapor transport method (PVT)

Publish Date: 2025-05-14 Implement Date: 2025-05-14 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CIET 1279-2025

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Semiconductor materials

Publish Date: 2025-05-14

Implement Date: 2025-05-14

Scope

Scope: This document specifies the process principles, equipment requirements, process procedures, quality control, safety, and environmental protection of the physical vapor transport (PVT) method for growing silicon carbide single crystals. This document applies to the process, equipment, materials, and quality control related to the growth of silicon carbide single crystals using the PVT method, and clarifies the crystal form and size range of the silicon carbide single crystals covered by this document. Main technical content: This document specifies the process principles, equipment requirements, process procedures, quality control, safety, and environmental protection of the physical vapor transport (PVT) method for growing silicon carbide single crystals. This document applies to the process, equipment, materials, and quality control related to the growth of silicon carbide single crystals using the PVT method, and clarifies the crystal form and size range of the silicon carbide single crystals covered by this document.