GB/T 43894.2-2026 Active National standards

GB/T 43894.2-2026 Practice for determining semiconductor wafer near-edge geometry—Part 2:Roll-off amount(ROA)

Publish Date: 2026-01-28 Implement Date: 2026-08-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 43894.2-2026

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2026-01-28

Implement Date: 2026-08-01

Pages: 16 pages

Scope

This document describes a method for evaluating the near-edge geometry of semiconductor wafers using the Rolled Off-Edge (ROA) method.
This document is applicable to 300 mm diameter silicon polished wafers, silicon epitaxial wafers, silicon-on-insulator (SOI) wafers, and other circular wafers with surface layers. It is also suitable for evaluating the near-edge geometry of circular wafers made from other semiconductor materials.
Note: For 200 mm diameter silicon wafers, please refer to this document.