GB/T 30866-2014 Replaced National standards

GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers

GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers

Publish Date: 2014-07-24 Implement Date: 2015-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30866-2014

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2014-07-24

Implement Date: 2015-02-01

Pages: 8 pages

Scope

This standard specifies the method of measuring the diameter of silicon carbide single crystals using micrometers.
This standard is applicable to the measurement of the diameter of silicon carbide single crystals.

Development Information

Word Count: 6 Thousand words Pages: 8 pages

Superseded by the following standards

GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06