GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal

Scope

This document describes the methods of determining the crystal orientation of semiconductor single crystals by X-ray diffraction orientation and optical micrograph orientation.
This document is applicable to the determination of the crystal orientation of semiconductor single crystals. The X-ray diffraction orientation method is suitable for determining the surface orientation of semiconductor single crystal materials such as silicon, germanium, gallium arsenide, silicon carbide, gallium oxide, gallium nitride, antimony indium and indium phosphide, which are roughly parallel to the low-index atomic planes; the optical micrograph orientation method is suitable for determining the surface orientation of semiconductor single crystal materials such as silicon and germanium, which are roughly parallel to the low-index atomic planes.

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