GB/T 1555-2009 Replaced National standards

GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal

GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 1555-2009

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 7 pages

Scope

This standard specifies the methods for determining the orientation of semiconductor single crystals by X-ray diffraction and optical mapping.
This standard is applicable to determining the surface orientation of semiconductor single crystal materials that are roughly parallel to the low-index atomic planes.

Development Information

Word Count: 11 Thousand words Pages: 7 pages

Replace the following standards

GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal

Superseded by the following standards

GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal

Referenced Standards

GB/T 2481.1-1998 Bonded abrasives—Determination and designation of grain size distribution—Part 1:Macrogrits F4 to F220 GB/T 2481.2-1998 Bonded abrasives—Determination and designation of grain size distribution—Part 2:Microgrits F230 to F1200 GB/T 2481.2-2009 Bonded abrasives—Determination and designation of grain size distribution—Part 2:Microgrits GB/T 2481.2-2020 Bonded abrasives—Determination and designation of grain size distribution—Part 2:Microgrits GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 2481.1-2025 Bonded abrasives—Determination and designation of grain size distribution—Part 1:Macrogrits F4 to F220

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06