GB/T 35306-2023 Active National standards

GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method

GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method

Publish Date: 2023-08-06 Implement Date: 2024-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 35306-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: \nMetal material testing

Publish Date: 2023-08-06

Implement Date: 2024-03-01

Pages: 7 pages

Scope

This document describes the method of determining the substitutional carbon and interstitial oxygen content in silicon single crystals using low-temperature Fourier transform infrared spectroscopy.
This document is suitable for determining the substitutional carbon and interstitial oxygen content in n-type silicon single crystals with a room-temperature resistivity greater than 1 Ω·cm and p-type silicon single crystals with a room-temperature resistivity greater than 3 Ω·cm. The measurement range (in terms of atomic number) is 2.5×1014 cm-3 to 1.5×1017 cm-3.

Development Information

Word Count: 15 Thousand words Pages: 7 pages

Replace the following standards

GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry

Referenced Standards

GB/T 8170-1987 Rules for rounding off of numberical values GB/T 8170-2008 Rules of rounding off for numerical values & expression and judgement of limiting values GB/T 8322-1987 Molecular absorption spectrometry—Terminology GB/T 8322-2008 Molecular absorption spectrometry—Terminology GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy

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