GB/T 3656-1983
Replaced
GB/T 42902-2023
Active
National standards
GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
Price:
$ 74
Basic Information
Standard Code:
GB/T 42902-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2023-08-06
Implement Date:
2024-03-01
Pages:
12 pages
Scope
This document describes the method of testing surface defects on silicon carbide epitaxial wafers using laser scattering.
This document is applicable to the surface defect testing of 4H-SiC epitaxial wafers.
Development Information
Referenced Standards
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 25915.1-2010 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
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GB/T 3849-1983
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GB/T 3851-1983
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GB/T 4326-1984
Replaced