T/IAWBS 010-2019 Active Group standards

T/IAWBS 010-2019 Surface quality and microstructure density detection method for silicon carbide single crystal polishing wafers using laser scattering detection method

Publish Date: 2019-12-27 Implement Date: 2019-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 010-2019

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Semiconductor materials

Publish Date: 2019-12-27

Implement Date: 2019-12-31

Scope

Scope: This standard specifies the test method for the surface quality and microtube density of 4H and 6H silicon carbide single-crystal polished wafers - the laser scattering test method. This standard is applicable to silicon carbide single-crystal polished wafers prepared after the processing of 4H and 6H silicon carbide single crystals. Main technical content: With the development of the SiC industry, obtaining silicon carbide single-crystal polished wafers with perfect surfaces has become one of the key links in the application of silicon carbide materials. In order to manufacture high-performance SiC power electronic devices, it is required that the wafer has a complete crystal lattice, an extremely smooth and damage-free surface with high flatness, and no crystal orientation deviations. Because even the presence of microscopic defects on the surface can damage the surface performance of the crystal material and even lead to changes in the crystal structure, affecting the electrical performance of the device. The current test method mainly relies on visual observation under diffuse reflection conditions, but the surface of the SiC single-crystal polished wafers has defects such as particles, scratches, and pits, which may lead to significant errors if relying on manual observation. This standard uses advanced instruments to objectively characterize the scratches, particles, pits, and other defects on the surface of the SiC single-crystal polished wafers.