T/IAWBS 009-2019 Active Group standards

T/IAWBS 009-2019 Power Semiconductor Devices Steady-State Humidity-Heat High-Pressure Bias Test

T/IAWBS 009-2019

Publish Date: 2019-12-27 Implement Date: 2019-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 009-2019

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Semiconductor materials

Publish Date: 2019-12-27

Implement Date: 2019-12-31

Scope

Scope: This standard provides a steady-state high-temperature and high-humidity bias test method for non-airtight packaged power semiconductor devices, including but not limited to insulated gate bipolar transistors, field-effect transistors, and diodes, to evaluate the reliability of devices in withstanding high voltages in high-temperature and high-humidity environments. This standard applies to silicon semiconductor devices and wide bandgap semiconductor devices; Main technical content: The high-temperature and high-humidity reverse bias test is a reliability test to evaluate the durability of devices under high-temperature and high-humidity bias conditions. The main failure mechanisms include moisture-related corrosion, a decrease in blocking capability caused by electrochemical effects, and an increase in leakage current. Typically, the blocking voltage used in this test is relatively low, such as the bias voltage specified in AEC-Q101 not exceeding 100V. The reason for using a lower bias voltage is that the industry generally believes that high blocking voltages can lead to high leakage currents and cause self-heating of devices, which may affect the entry of moisture into the package. However, recent research results and practical application experience have shown that the failure rate of power devices under high-temperature and high-humidity conditions with high bias voltages is significantly higher, and the existing test methods no longer meet the verification needs of the devices' durability in high-temperature and high-humidity environments. At the same time, the high-temperature and high-humidity reverse bias test involves three stresses: temperature, humidity, and bias voltage, but the AEC-Q101 does not provide detailed specifications for the application of these three stresses. This project aims to conduct in-depth research on the ability of different packaged devices to resist moisture entry during the high-temperature and high-humidity reverse bias