T/NXCL 017-2022 300 mm heavy phosphorus-doped straight pull silicon single crystal polished wafer
T/NXCL 017-2022 300 mm heavy phosphorus-doped straight pull silicon single crystal polished wafer
Basic Information
Scope
Main technical content: This document specifies the product classification, technical requirements, test methods, inspection specifications, and marking, packaging, transportation, storage, order form (or contract) content, and quality commitments for 300 mm heavily doped phosphorus single-crystal silicon polished wafers. The technical requirements include raw materials, physical properties, chemical composition, geometric parameters, oxidation-induced defects, surface quality, and edge profiles. The test methods include conductivity type, resistivity, resistivity change, gap oxygen content, radial oxygen content, carbon content, surface metal content, intrinsic metal (iron) content, diameter, crystal orientation and orientation deviation, thickness and total thickness change, bending, warping, flatness and local flatness, oxidation-induced defects, surface quality, local light scattering bodies (minor particle contamination), and edge profile measurement methods. The inspection rules are divided into factory inspection and type inspection.