GB/T 43493.1-2023 Active National standards

GB/T 43493.1-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1:Classification of defects

Publish Date: 2023-12-28 Implement Date: 2024-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 43493.1-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Electronic devices and specialized materials, parts, and structural components

ICS Name: Other discrete semiconductor devices

Publish Date: 2023-12-28

Implement Date: 2024-07-01

Pages: 21 pages

Scope

This document provides a classification of defects in 4H-SiC (silicon carbide) homoepitaxial wafers. The defects are classified according to their crystallographic structure and identified using non-destructive testing methods such as optical microscopy (OM), photoluminescence (PL), and X-ray topography (XRT) imaging.

Development Information

Word Count: 42 Thousand words Pages: 21 pages

Same series standard

GB/T 43493.2-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2:Test method for defects using optical inspection GB/T 43493.3-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3:Test method for defects using photoluminescence

Adopt standards

IEC 63068-1:2019

Related Standards

GB/T 4298-1984 Abolished

GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

Publish Date: 1984-03-28

GB/T 15449-1995 Active

GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application

Publish Date: 1995-01-05

GB/T 15450-1995 Abolished

GB/T 15450-1995 Blank detail specification for silicon dual-gate field-effect transistors

Publish Date: 1995-01-05

GB/T 15529-1995 Active

GB/T 15529-1995 Blank detail specification for LED numeric displays

Publish Date: 1995-04-06

GB/T 32817-2016 Active

GB/T 32817-2016 Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS

Publish Date: 2016-08-29

GB/T 41852-2022 Active

GB/T 41852-2022 Semiconductor devices-Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures

Publish Date: 2022-10-12