GB/T 43493.2-2023 Active National standards

GB/T 43493.2-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2:Test method for defects using optical inspection

Publish Date: 2023-12-28 Implement Date: 2024-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 43493.2-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Electronic devices and specialized materials, parts, and structural components

ICS Name: Other discrete semiconductor devices

Publish Date: 2023-12-28

Implement Date: 2024-07-01

Pages: 22 pages

Scope

This document provides the definition and method of optical detection of defects on commercial silicon carbide (SiC) homogeneous epitaxial wafer products. It mainly provides optical image examples of these defects to provide a basis for the detection and classification of defects on SiC homogeneous epitaxial wafers.
This document mainly discusses the non-destructive characterization methods of defects, so destructive characterization methods such as wet etching are not included in the scope of this document.

Development Information

Word Count: 45 Thousand words Pages: 22 pages

Same series standard

GB/T 43493.1-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1:Classification of defects GB/T 43493.3-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3:Test method for defects using photoluminescence

Adopt standards

IEC 63068-2:2019

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