GB/T 43493.3-2023 Active National standards

GB/T 43493.3-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3:Test method for defects using photoluminescence

Publish Date: 2023-12-28 Implement Date: 2024-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 43493.3-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Electronic devices and specialized materials, parts, and structural components

ICS Name: Other discrete semiconductor devices

Publish Date: 2023-12-28

Implement Date: 2024-07-01

Pages: 21 pages

Scope

This document provides the definition and method for detecting light-induced luminescence defects in commercial silicon carbide (4H-SiC) homogeneous epitaxial wafers. It mainly uses light-induced luminescence image examples and emission spectrum examples to provide a basis for detecting and classifying defects on SiC homogeneous epitaxial wafers through light-induced luminescence detection.

Development Information

Word Count: 42 Thousand words Pages: 21 pages

Same series standard

GB/T 43493.1-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1:Classification of defects GB/T 43493.2-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2:Test method for defects using optical inspection

Adopt standards

IEC 63068-3:2020

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