T/IAWBS 015-2021 The testing method for half-width of X-ray double-crystal waviness of gallium oxide monocrystalline wafers
T/IAWBS 015-2021 The testing method for half-width of X-ray double-crystal waviness of gallium oxide monocrystalline wafers
Basic Information
Scope
Scope: This document specifies the method of testing the swing curve and half-peak width of gallium oxide single crystals using a double-crystal X-ray diffractometer. This document is applicable to gallium oxide single crystals grown by the melt method and other methods, as well as those prepared by directional cutting of crystal ingots. Samples subjected to chemical or mechanical polishing of the aforementioned single crystals are also suitable for this method. This document is applicable to β-phase gallium oxide single crystals. Main technical content: Gallium oxide (Ga2O3) has gained widespread attention due to its ultra-wide bandgap of 4.9 eV, natural daylight-blind ultraviolet characteristics, and extremely high breakdown field strength. Gallium oxide exhibits characteristics such as daylight-blindness, high-pressure and high-temperature resistance, low loss and high power, and has broad prospects in the markets for semiconductor power devices and power electronics. Gallium oxide single crystal materials are the most ideal substrates for growing gallium oxide, and they offer irreplaceable advantages in improving the quality of epitaxial films, reducing dislocation density, enhancing device efficiency, and prolonging operating life. One of the important performance indicators of gallium oxide single crystal materials is crystal quality, and high-resolution X-ray diffraction swing curve half-peak width testing has the advantages of being rapid, non-destructive, and highly accurate, making it an essential method for characterizing the crystal quality of gallium oxide single crystals. The preparation of this method helps standardize the evaluation of product quality in the industry and can play an important role in promoting the healthy development of the industry and the standardization of semiconductor materials.