T/IAWBS 007-2018 Active Group standards

T/IAWBS 007-2018 4H Silicon Carbide Homogeneous Epitaxial Layer Thickness Infrared Reflection Measurement Method

T/IAWBS 007-2018

Publish Date: 2018-12-06 Implement Date: 2018-12-17 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 007-2018

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2018-12-06

Implement Date: 2018-12-17

Scope

Scope: This standard specifies the method for measuring the thickness of homogeneous epitaxial layers (with a doping concentration of 5×1014 cm-3 to 5×1016 cm-3) on heavily doped 4H-N-type silicon carbide substrates (with an N-type doping concentration of >5×1018 cm-3) by infrared reflection. This standard applies to silicon carbide epitaxial layers with a thickness of 2-100 micrometers. Main technical content: This standard specifies the method for measuring the thickness of homogeneous epitaxial layers (with a doping concentration of 5×1014 cm-3 to 5×1016 cm-3) on heavily doped 4H-N-type silicon carbide substrates (with an N-type doping concentration of >5×1018 cm-3). This standard applies to silicon carbide epitaxial layers with a thickness of 2-100 micrometers. The method specified in this standard is that the refractive index of the 4H silicon carbide substrate and the epitaxial layer is different due to the doping concentration, so the reflected spectrum of the sample will show continuous interference fringes reflecting the thickness information of the epitaxial layer. When the optical path difference between the light beam reflected from the surface of the epitaxial layer and the light beam reflected from the interface of the substrate is an integer multiple of half a wavelength, maximum and minimum values can be observed in the reflected spectrum. According to the peak positions of the interference fringes in the reflected spectrum, the optical constants of the sample and the incident angle can be used to calculate the corresponding thickness of the epitaxial layer. The principle of thickness detection of 4H silicon carbide epitaxial layers is shown in Figure 2: The incident light is incident from point A, reflected by the epitaxial surface AC, refracted at the interface between the substrate and the epitaxial layer B, and emitted from point C. The phase difference δ between the reflected light at point D can be obtained.