GB/T 11093-1989
Replaced
GB/T 24577-2009
Active
National standards
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
Basic Information
Standard Code:
GB/T 24577-2009
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
12 pages
Scope
1.1 This standard specifies the qualitative and quantitative methods for organic pollutants on the surface of silicon wafers, using either a gas chromatograph-mass spectrometer (GC-MS) or a phosphorus selective detector, or a combination of both. 1.2 This standard describes the thermal desorption gas chromatograph (TD-GC) and related procedures for sample preparation and analysis.
Development Information
Referenced Standards
ASTM D6196
Adopt standards
SEMI MF 1982-1103
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced