T/CNIA 0017-2019 Active Group standards

T/CNIA 0017-2019 Determination of Impurity Content in Polysilicon Using Chlorosilane by Inductively Coupled Plasma Mass Spectrometry (ICP-MS)

T/CNIA 0017-2019 Determination of Impurity Content in Polysilicon Using Chlorosilane by Inductively Coupled Plasma Mass Spectrometry (ICP-MS)

Publish Date: 2019-02-13 Implement Date: 2019-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: T/CNIA 0017-2019
Standard Type: Group standards
Standard Status: Active
is_force_gb: no
CCS Name: Analysis methods for semi-metallic and semiconductor materials
ICS Name: Comprehensive Testing of Metal Materials
Publish Date: 2019-02-13
Implement Date: 2019-06-01

Scope

Main technical content: This standard specifies the inductively coupled plasma mass spectrometry method for determining the impurity content (boron, phosphorus, iron, calcium, aluminum, chromium, nickel, copper, zinc, titanium, potassium, and sodium) in chlorosilane used for polysilicon. This standard is applicable to the determination of the impurity content (boron, phosphorus, iron, calcium, aluminum, chromium, nickel, copper, zinc, titanium, potassium, and sodium) in chlorosilane used for polysilicon, with a measurement range of 0μg/L to 1000μg/L.

Development Information

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