GB/T 11093-1989
Replaced
T/NXCL 30-2024
Active
Group standards
T/NXCL 30-2024 300 mm low oxygen content monocrystalline silicon single crystal
T/NXCL 30-2024 300 mm low oxygen content monocrystalline silicon single crystal
Price:
$ 20.00
Basic Information
Standard Code:
T/NXCL 30-2024
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
-
ICS Name:
Semiconductor materials
Publish Date:
2024-02-06
Implement Date:
2024-02-06
Scope
Main technical content: This document specifies the technical requirements, test methods, inspection specifications, and aspects such as marking, packaging, transportation, storage, quality certificates, and quality commitments for 300 mm low-oxygen content direct-pull silicon single crystals. This document is applicable to 300 mm low-oxygen content silicon single crystals prepared by the direct-pull method using electronic-grade polycrystalline silicon as the main raw material. The products are mainly used as substrates for power devices such as insulated gate bipolar transistors (IGBTs).
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced